Trapping Process of Vacancies by Foreign Atoms
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概要
- 論文の詳細を見る
A trapping process of vacancies by foreign atoms in fcc crystals after quenchingis examined as a relaxation process of a spacial distribution of vacancies. Thedistribution of vacancies is constructed on a coarse-grained lattice, and its evolu-tion is described by Markov chains. A relaxation time of the system is calculatedas a function of annealing temperatures and binding energies between a foreignatom and a vacancy, and is compaired with that calculated from the rate equationof Damask and Dienes type. The relation between the relaxation time and thetrapping time is discussed. It is also shown that this model yields, in a stationarystate, the same conclusion derived from a usual thermodynamical formula.
- 社団法人日本物理学会の論文
- 1979-07-15
著者
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Yoshida Sho
Department Of Electrical Engineering Tohoku University
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Yoshida Sho
Department Of Physics Faculty Of Science Science University Of Tokyo
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SAKAGAMI Yoshirou
Department of Physics,Faculty of Science,Science University of Tokyo
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Sakagami Yoshirou
Department Of Physics Faculty Of Science Science University Of Tokyo
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Yoshida Sho
Department Of Computer Science Kyushu Institute Of Technology
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