Anisotropy of the Temperature-Dependent Resistivity of Intermetallic Compound InBi between 4.2 and 293 K

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概要

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• Electrical-resistivity measurements have been made on single crystals ofintermetallic compound InBi in the temperature range 4.2-293 K. It was observedthat the temperature-dependence of the anisotropic parameter at(=p77/p.) showeda broad maximum and the temperature corresponding to the maximum of ct(T)was higher than the value obtained from pure metals. These have been examinedon the basis of the Case and Gueths simplified model of conductivity in ananisotropic metal. In the case of InBi there is at least qualitative agreement withthe predictions of the model.

• 社団法人日本物理学会の論文
• 1978-03-15

著者

• MORI Katsunori

  Faculty of Engineering,Toyama University

• Mori Katsunori

  Faculty Of Engineering Toyama University

• Saito Yoshitami

  Faculty Of Literature And Science Toyama University

• Yoshitami Saito

  Faculty Of Science Toyama University

• Mori Katsunori

  Faculty Of Science Toyama University

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