Luminescence Due to High-Density Electron-Hole Plasma in GaAs
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概要
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Spontaneous and stimulated emissions due to high-density metallic plasma state ofelectrons and holes have been observed in GaAs under intense optical excitation. Theexperiment has been performed on high-purity epitaxial layers in the 4.2 -17 Ktemperature range using a pulsed nitrogen laser and a dye laser as exciting sources,Luminescence band shape fits well with that calculated by taking account of the band-gap reduction and energy broadening. Dependence of the emission spectra on exci-tation intensity, temperature, and applied electric and magnetic fields gives support tothe above interpretation. The energetics and thermodynamical properties of the high-density plasma state are discussed.
- 社団法人日本物理学会の論文
- 1977-11-15
著者
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MORIYA Tetsuo
Electrotechnical Laboratory
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Kushida Takashi
The Institute For Solid State Physics The University Of Tokyo
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Kushida Takashi
The Institute for Solid State Physics,The University of Tokyo
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