Luminescence Spectra Due to Exciton-Exditon Collisions in Semiconductors. : I. Spontaneous Emission Spectra
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概要
- 論文の詳細を見る
Spontaneous emission spectra are calculated for typical radiative exciton-cxciton collision processes at various temperatures. A suitably weighted δ-function of the inter-exciton separation is employed as the effective interaction potential, and numerical evaluations are performed with the band parameters of GaAs. The results describe well the band shape of the emission due to exciton-exciton collisions in GaAs which dominates the luminescence under intense nitrogen-laser excitation at low temperatures.
- 社団法人日本物理学会の論文
- 1976-05-15
著者
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MORIYA Tetsuo
Electrotechnical Laboratory
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Kushida Takashi
The Institute For Solid State Physics The University Of Tokyo:department Of Physics Osaka University
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Kushida Takashi
The Institute For Solid State Physics The University Of Tokyo
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