Electrical Conduction in a Narrow Band. : II. Effect of Randomness in Atomic Distribution

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概要

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• The mobility of a hole in a strongly correlated Hubbard model was previously studied by Ohata and Kubo with the moment method and a new possible mechanism was proposed for negative magnetoresistance. In the present paper the previous theory is extended to include the effect of randomness in distribution of atoms. If the vacant sites are only a fraction of the whole sites and the spins are almost aligned, it is found that the disorder of spin orientation and that of atomic distribution act as two independent mechanisms for the resistance of hole conduction. On the other hand, if the spins are nearly completely disordered, this additivity will not hold and the spin disorder plays a major role as the resistance mechanism.

• 一般社団法人日本物理学会の論文
• 1970-11-05

著者

• Ohata Nagao

  Department Of Physics Aoyama Gakuin University

関連論文

• Electrical Conduction in a Narrow Band. I. : Moment Method
• A Quantum Theory of Double Exchange. I
• Self-Trapped Electrons in Magnetic Semiconductors
• A Stochastic Model of a System of Electrons with Dynamical Interactions
• Decay and Fluctuation of a One-Dimensional Supercurrent from the Viewpoint of Nonlinear Nonequilibrium Statistical Physics
• Electrical Conduction in a Narrow Band. : II. Effect of Randomness in Atomic Distribution

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