Self-Trapped Electrons in Magnetic Semiconductors
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概要
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The state of a self-trapped electron or a "magnetic polaron" in a magnetjcsemiconductor is investigated from a new point of view. The spatial variationof polarization of ionic spins around a conduction electron, which is ignoredin the existing theories, is taken into account in calculating the binding energyof a magnetic polaron. The binding energy is plotted in a diagram against anappropriate single variable vvhich characterizes the spatial distribt?tjon of spinpolarization.
- 社団法人日本物理学会の論文
- 1977-05-15
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関連論文
- Electrical Conduction in a Narrow Band. I. : Moment Method
- A Quantum Theory of Double Exchange. I
- Self-Trapped Electrons in Magnetic Semiconductors
- A Stochastic Model of a System of Electrons with Dynamical Interactions
- Decay and Fluctuation of a One-Dimensional Supercurrent from the Viewpoint of Nonlinear Nonequilibrium Statistical Physics
- Electrical Conduction in a Narrow Band. : II. Effect of Randomness in Atomic Distribution