Nucleation Model for Domain Wall Motion in Rochelle Salt

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概要

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• The switching transient in Rochelle salt was reinvestigated with respect to the domain wall motion. The results showed that the wall velocities were characterized by the two types of activation fields, δ and α at low and intermediate fields, respectively. The relationship α=2δ is nearly satisfied throughout the ferroelectric phase. The result was analyzed in terms of the "layer by layer" advancement of the wall in the nucleation model. The result indicates the nucleation model can also be applied for Rochelle salt.

• 1974-07-15

著者

• Nogami Gyoichi

  Department Of Electrical Engineering Kyushu Institute Of Tecgnology

関連論文

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• Switching Transients in Rochelle Salt
• Nucleation Model for Domain Wall Motion in Rochelle Salt
• Thermal Switching Due to a Local Inhomo-Geneity Existing Between the Electrode and the Amorphous Semiconductor
• Characterization of Semiconductor Heterojunction Electrodes

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