The de Haas-van Alphen Effect in Pure and Germanium-Doped Arsenic

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概要

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• Two sets of the short period oscillations for large-tilt pockets (α-oscillation) and small-tilt pockets (β-oscillation) besides the long period oscillations for the tilted hyperboloids (γ-oscillations correspond to a multiply-connected Fermi surface calculated by Lin and Falicov and β-oscillations to closed pockets. Changes in both α and γ-periods have been observed by doping with germanium. The fermi surfaces corresponding to α and γ-oscillations expanded about 5% and 40%, respectively, by doping with nominally 0.6 at. % germanium. As a substitutional germanium atom is considered to give hole to arsenic, it is concluded that a multiply-connected Fermi surface is hole as far as the rigid band approximation is valid.

• 社団法人日本物理学会の論文
• 1968-07-05

著者

• Ishizawa Yoshio

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Fermi Surface Study of Pure and Doped Antimony by Means of the de Haas-van Alphen Effect
• The de Haas-van Alphen Effect in Pure and Germanium-Doped Arsenic
• Shape of the Fermi Surface of Electron in Antimony
• Determination of Carrier Sign in Antimony by the Study of de Haas-van Alphen Effect

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