Fermi Surface Study of Pure and Doped Antimony by Means of the de Haas-van Alphen Effect

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概要

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• The de Haas-van Alphen effect of pure and tin or tellurium-doped antimony has been investigated using either the torque magnetometer or the low frequency field modulation technique. The Fermi surfaces of pure antimony consist of warped, large-tilt ellipsoids (α-carriers) and small-tilt ellipsoids (β-carriers) as far as the observed periods are concerned. A tilt angle of the former is 53°, while that of the latter is 88° from the trigonal axis. The Fermi surface for α-carries expands by 0.10 at.% tin-doping and contracts by 0.20 at.% tin-doping. Because of these changes in Fermi surfaces being mainly due to the shift of the Fermi level, it is concluded that α-carriers are holes and β-carriers are electrons.

• 社団法人日本物理学会の論文
• 1968-07-05

著者

• Ishizawa Yoshio

  The Institute For Solid State Physics The University Of Tokyo

• Ishizawa Yoshio

  The Institute for Solid State Physics, The University of Tokyo

関連論文

• Fermi Surface Study of Pure and Doped Antimony by Means of the de Haas-van Alphen Effect
• The de Haas-van Alphen Effect in Pure and Germanium-Doped Arsenic
• Shape of the Fermi Surface of Electron in Antimony
• Determination of Carrier Sign in Antimony by the Study of de Haas-van Alphen Effect

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