Determination of Carrier Sign in Antimony by the Study of de Haas-van Alphen Effect

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1965-07-05

著者

• Ishizawa Yoshio

  The Institute For Solid State Physics The University Of Tokyo

• Tanuma Seiichi

  The Institute For Solid State Physics The University Of Tokyo

関連論文

• Fermi Surface Study of Pure and Doped Antimony by Means of the de Haas-van Alphen Effect
• The de Haas-van Alphen Effect in Pure and Germanium-Doped Arsenic
• Shape of the Fermi Surface of Electron in Antimony
• Thermal Conductivity of Superconducting and Normal Lanthanum
• Thermal Conductivity of Superconducting and Normal Lanthanum
• Determination of Carrier Sign in Antimony by the Study of de Haas-van Alphen Effect

スポンサーリンク