Electronic Band Structure and Gap Formation in CeRhAs(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
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概要
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We have performed first-principles band structure calculation for CeRhAs and its isostructural Ce compounds. Calculated insulating and metallic or semimetallic ground states are consistent with recent experimental observations. We discussed projected density of states on Ce 4f |J,J_z> states, which is a clue to understand the anisotropic effects to realize the ground state and gap formation. Band gap and pseudogaps are opened mainly due to Ce 4f |5/2, ±5/2> states. These states are very sensitive to lattice deformation. Gap formation and structural instability in CeRhAs may be understood by orientations of Ce 4f orbitals.
- 社団法人日本物理学会の論文
- 2004-01-15
著者
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Ishii F
Department Of Quantum Matter Adsm Hiroshima University
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Ishii Fumiyuki
Department Of Physical Sciences Hiroshima University
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Oguchi Tamio
Department Of Engineering Physics The University Of Electro-communications
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