Ionization Energies and Their Pressure Dependence of Cu and Ag in InSb
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1966-11-05
著者
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Ohmura Yamichi
Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.
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Ohmura Yamichi
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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WAKATSUKI Masao
Central Research Laboratory Tokyo Shibaura Electric Co., Ltd.
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Wakatsuki Masao
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
関連論文
- Ionization Energies and Their Pressure Dependence of Cu and Ag in InSb
- On the Cyclotron Resonance of Holes in Zinc Blende Type Semiconductors
- Epitaxial Growth of Silicon Films Evaporated on Sapphire
- Hole Surfaces in Indium Antimonide
- Galvanomagnetic Anisotropy of p-Type InSb
- Specific Heat of Indium Antimonide between 6 and 100°K
- Landau Levels and Cyclotron Resonance of Holes in InSb
- Pressure Dependence of the Characteristics of InSb Esaki Diode