Hole Surfaces in Indium Antimonide

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概要

• 論文の詳細を見る

• Hole surfaces in InSb are considered in an approximation within the second order k-p perturbation theory applied to Γ_8 state. The effective masses of the <111> ellipsoid which is the main feature of hole surfaces in low energy regions, are obtained in terms of the inverse mass parameters A, B and N from the analysis of dispersion relations as follows: [numerical formula]. Numerical evaluations are carried out and for ease of visualization energy contours of hole surfaces are illustrated in (001), (11^^-0) and (111) sections. The parameters used are Bagguley et al.'s cyclotron resonance data and the value of ΔE, the maximum energy in the <111> direction measured from that of k=0, equal to 5×10^<-4> eV.

• 社団法人応用物理学会の論文
• 1967-08-05

著者

• Ohmura Yamichi

  Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.

• Ohmura Yamichi

  Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.

関連論文

• Ionization Energies and Their Pressure Dependence of Cu and Ag in InSb
• On the Cyclotron Resonance of Holes in Zinc Blende Type Semiconductors
• Epitaxial Growth of Silicon Films Evaporated on Sapphire
• Hole Surfaces in Indium Antimonide
• Galvanomagnetic Anisotropy of p-Type InSb
• Specific Heat of Indium Antimonide between 6 and 100°K
• Landau Levels and Cyclotron Resonance of Holes in InSb

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