Galvanomagnetic Anisotropy of p-Type InSb

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概要

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• Both the longitudinal magnetoresistance anisotropy and the Hall ccefficient anisotropy in p-type InSb have been measured. In weak magnetic fields, the results down to 14°K are as follows. ΔM^<111>_i>ΔM^<001>_i in the longitudinal magnetoresistance. R_H^<001>_<110>^^^->R_H^<111>_<110>^^^- in the Hall coefficient. These are similar to the characteristics of the galvanomagnetic anisotropies for p-type Ge, this suggests that down to 14°K a p-type Ge-like energy surface is plausible, and the n-type Ge-like many valley structure suggested by theories, if it existed, would be revealed only in extremely low energy regions.

• 社団法人日本物理学会の論文
• 1966-10-05

著者

• Ohmura Yamichi

  Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.

• Ohmura Yamichi

  Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.

• Ohmura Y.

  Central Research Laboratory Tokyo Shibaura Electric Co., Ltd.

関連論文

• Ionization Energies and Their Pressure Dependence of Cu and Ag in InSb
• On the Cyclotron Resonance of Holes in Zinc Blende Type Semiconductors
• Epitaxial Growth of Silicon Films Evaporated on Sapphire
• Hole Surfaces in Indium Antimonide
• Galvanomagnetic Anisotropy of p-Type InSb
• Specific Heat of Indium Antimonide between 6 and 100°K
• Landau Levels and Cyclotron Resonance of Holes in InSb

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