Interband Optical Transitions in Extremely Anisotropic Semiconductors : I. Bound and Unbound Exciton Absorption

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概要

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• By using the effective-mass theory for exciton, the allowed and forbidden direct interband transitions in extremely anisotropic semiconductors are discussed. In this case, the problem is reduced to solving the Schrodinger equation for a hypothetical two-dimensional hydrogen atom. The bound and unbound solutions of the equation are obtained, and the absorption intensities in the discrete, quasi-continuous, and continuous spectral regions are calculated. It is shown that, in the allowed transitions, a small peak may appear just above the absorption edge because of the Coulomb interaction between an excited electron and a hole. This result is compared with the experimental curves of the absorption in layer-type semiconductors, CaS, GaSe, and GaTe.

• 一般社団法人日本物理学会の論文
• 1966-10-05

著者

• Sugano Satoru

  Institute For Solid Physics University Of Tokyo

• Shinada M.

  Institute For Solid State Physics University Of Tokyo

• SHINADA Masaki

  Institute for Solid State Physics, The University of Tokyo

• SUGANO Satoru

  Institute for Solid State Physics, The University of Toky

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