Resonance Transfer of Ionization Energy in Semiconductors

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概要

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• The thermal conductivity of semiconductor due to the resonance transfer of ionization energy of impurity state caused by the interelectronic interaction is calculated in each of three temperature ranges, the extrinsic, the exhaustion and the intrinsic ranges. The obtained conductivity increases exponentially with the temperature in the extrinsic range, but decreases in the exhaustion range. In the intrinsic range it increases again exponentially with the temperature when the temperature is lower than a critical point, but decreases as the temperature increases beyond the critical point. The experimental detection of our conductivity is possible under an appropriate condition in the intrinsic range, while impossible for almost all other cases.

• 社団法人日本物理学会の論文
• 1961-06-05

著者

• Ando Toshihiko

  Department Of Physics And Department Of Applied Physics Nagoya University

• KOSHINO Shigeharu

  Radiation Center of Osaka Prefecture

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