Scattering of Electrons by the Thermal Motion of Impurity Ions. II

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概要

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• The change of electrical resistance of dilute alloys due to the thermal motion of impurity ions at low temperatures is calculated with the use of a variational method. The obtained change of electrical resistance depends on T^2 at the limit of low temperature and its magnitude is larger than that of the normal phonon-scattering resistance when the temperature is sufficiently low.

• 理論物理学刊行会の論文
• 1960-11-25

著者

• KOSHINO Shigeharu

  Radiation Center of Osaka Prefecture

関連論文

• Resonance Transfer of Ionization Energy in Semiconductors
• Scattering of Electrons by the Thermal Motion of Impurity Ions. II
• Resonance Transfer of Ionization Energy in Semiconductors

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