Slow Decay of Reverse Current and Noise in Field Effect on Ge P^+-N Junction

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1961-05-05

著者

• Morita Yoshinori

  Kobe Kogyo (industories) Corp.

• EDAGAWA Hiroshi

  Kobe Kogyo (Industories) Corp.

• MAEKAWA Syun-ichi

  Kobe Kogyo Corp.

• INUISHI Yoshio

  College of Engineering, Osaka University

• Maekawa Syun-ichi

  Kobe Kogyo (industories) Corp.

• Inuishi Yoshio

  College Of Engineering Osaka University

関連論文

• γ Ray Irradiation on MOS Field Effect Transistor
• Electrical Properties of Oxidized Si P-N Junctions
• The Quantitative Evaluation of N-Type Conversion of Thermally Oxidized Si Surface
• Growth and Structure of Si Oxide Films on Si Surface
• Surface Field Effect on the Breakdown of Ge Grain Boundary
• Al Redistribution in Thermally Oxidized Si Surface
• Optical Absorption of Thermally Oxidized Si Oxide Film
• N Type Conversion of Thermally Oxidized Si Surface
• Slow Decay of Reverse Current and Noise in Field Effect on Ge P^+-N Junction
• Surface Field Effect and Noise in Ge Grain Boundary
• γRay Irradiation Effect on Thermally Oxidized Si P-N Junction
• 1/f Noise and Channel in Ge PN Junction
• Drift Mobility of Photo-Injected Electrons in Hexane-Silicone Mixture
• Effect of Thickness on Photoconduction of Colored KCl
• Effects of Vacancies on Pulse Photoconductions in CdS Single Crystals

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