集束イオンビームアシストエッチングによるアルミニウムの加工

概要

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Focused ion beam (FIB) milling is widely used for circuit repair, mask repair, and SEM sample prepair for cross-section observation. In the circuit repair application, it is important to achive a higher material selectivity of Al/Si0_2,and a higher milling rate. In order to realize both of these, focused ion beam assisted etching(FIBAE), where a chlorine containing gas is injected towards the milling site, was performed. Using Cl_2 gas only caused a significant side etch, though the etching rate of aluminum was quite high. When etching Al-Cu-Si alloy with a chlorine containing gas, a residue of Cu-Cl compound was formed. This can be decreased by heating the sample as high as 200℃. An etching selectivity(Al/SiO_2)of 100 was achived, without side-etching, by a gas mixture of SiCl_4(95%) and Cl_2(5%).
公益社団法人精密工学会の論文
1993-09-05