The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron
スポンサーリンク
概要
著者
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Sadoh T
Kyushu Univ.
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Sadoh Taizoh
Dept.of Electronic Device Eng. Grad.school Of Information Science And Electrical Eng. Kyushu Univ.
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TSUKAMOTO Keiichi
Kyushu Denki Junior College
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IKEDA Akihiro
Dept.of Electronic Device Eng.,Graduate School of Information Sci.and Electrical Eng.,Kyushu Univ.
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Ikeda Akihiro
Dept.of Electronic Device Eng. Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
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Ikeda Akihiro
Dept.of Electronic Device Eng. Graduate School Of Information Sci.and Electrical Eng. Kyushu Univ.
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IKEDA Akihiro[et
Dept.of Electronic Device Eng.,Graduate School of Information Sci.and Electrical Eng.,Kyushu Univ.
関連論文
- Fabrication and Characteristics Evaluation of CoSi_2-Gate MOS Electron Tunneling Emission Cathode
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation
- The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron
- Improvement of Breakdown Characteristics of the Gate Oxynitride Using N_2O