Improvement of Breakdown Characteristics of the Gate Oxynitride Using N_2O
スポンサーリンク
概要
著者
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IKEDA Akihiro
Dept.of Electronic Device Eng.,Graduate School of Information Sci.and Electrical Eng.,Kyushu Univ.
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Kuroki Yukinori
Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
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Ikeda Akihiro
Dept.of Electronic Device Eng. Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
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FUJIKI Chika
Grad.School of Information Sci.and Electrical Eng.,Kyushu Univ.
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Fujiki Chika
Grad.school Of Information Sci.and Electrical Eng. Kyushu Univ.
関連論文
- The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron
- Improvement of Breakdown Characteristics of the Gate Oxynitride Using N_2O