Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation
スポンサーリンク
概要
著者
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Sadoh Taizoh
Dept.of Electronic Device Eng. Grad.school Of Information Science And Electrical Eng. Kyushu Univ.
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ZHANG Yi-Qun
Dept.of Electronic Device Eng.,Grad.School of Information Science and Electrical Eng.,Kyushu Univ.
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MATSUSHITA Atsushi
Dept.of Electronic Device Eng.,Grad.School of Information Science and Electrical Eng.,Kyushu Univ.
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Matsushita Atsushi
Dept.of Electronic Device Eng. Grad.school Of Information Science And Electrical Eng. Kyushu Univ.
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Zhang Yi-qun
Dept.of Electronic Device Eng. Grad.school Of Information Science And Electrical Eng. Kyushu Univ.
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SADOH Taizoh[et
Dept.of Electronic Device Eng.,Grad.School of Information Science and Electrical Eng.,Kyushu Univ.
関連論文
- Fabrication and Characteristics Evaluation of CoSi_2-Gate MOS Electron Tunneling Emission Cathode
- Resistance Increase in CoSi_2 Layer by Irradiation Induced Damage
- Characterization of CoSi_2 Gate MOS Structure Formed by Ion Irradiation
- The Evaluation of Temporary Degradation in Quarter Micron MOSFET by Hydrogen Passivation of Boron