Crystallization Process of the Antimony Layer Deposited onto the Thin Layer of Gold or Tellurium in a Vacuum of 10-5Pa

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概要

• 論文の詳細を見る
• 電気通信大学の論文

著者

• 鈴木 貴久

  Komatsu Electronic Metals Co. Ltd.

• 橋本 満

  Department of Applied Physics and Chemistry, The University of Electro-Communications

• 橋本 満

  電気通信大学電子物性工学科物性工学講座

• 橋本 満

  Department Of Applied Physics And Chemistry

関連論文

• RBS Study of the Ni Film and Ni/Si(100) Interface Prepared by Biased dc Sputter-Deposition
• Crystallization Process of the Antimony Layer Deposited onto the Thin Layer of Gold or Tellurium in a Vacuum of 10-5Pa
• Crystallization Process of the Antimony Layer Deposited onto the Thin Layer of Gold or Tellurium in a Vacuum of 10-5 Pa
• Effect of Substrate Temperature on Crystallization in Evaporated Antimony Film
• Critical Thickness for Crystallization in Evaporated Antimony Thin Film
• 29a-PS-51 Ni/SiO / Ni/Si(001)及びNi/MgO薄膜の常温におけるSWR
• Adhesion of Ni-Cu Films dc Biased Plasma-Sputter Deposited on MgO(001)

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