Interfacial Characteristics of Copper/Diffusion Barrier/Low DielectricConstant Material Systems at Elevated Temperatures

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概要

• 論文の詳細を見る

• Thermal reactions of sputtered Cu films on the fluorinated silicon oxide (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400 to 800 °C were examined. It is found that the sheet resistance values of allsamples decreased after annealing at 400 to 600 °C and increased after annealing at 700 or 800 °C. Without the barrierlayer, the increase of sheet resistance was accompanied with the dewetting of Cu films and the carbon outdiffusion for Cu/OSG sample or the Cu indiffusion of the Cu/FSG sample. When a TiN/Ti or a TaN/Ta barrier layer was interposed between Cu and the dielectriclayer, the degree of dewetting of Cu film was significantly reduced for both systems. The reaction characteristics of the two dielectric svstems uoon vacuum annealing, with and without the barrierlaver. are discussed.

• 秋田大学の論文

著者

• Chang C.

  National Nano Device Laboratories

• Chang C.c.

  National Cheng Kung University

• CHEN J.S.

  National Cheng Kung University

• JENG J.S.

  National Cheng Kung University

• Chen J.

  National Cheng Kung University

• Jeng J.

  National Cheng Kung University

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