Investigation of the Indium Atom Interdiffusion on the Growth of the InGaN/GaN Heterostructure

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概要

• 論文の詳細を見る
• 1996-08-26

著者

• Chang C.

  National Nano Device Laboratories

• Feng M.

  National Nano Device Laboratories

• TSANG J.

  National Nano Device Laboratories

• GUO J.

  National Nano Device Laboratories

• CHAN S.

  National Nano Device Laboratories

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• Investigation of the Indium Atom Interdiffusion on the Growth of the InGaN/GaN Heterostructure
• Interfacial Characteristics of Copper/Diffusion Barrier/Low DielectricConstant Material Systems at Elevated Temperatures

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