<論文>ECR共鳴点成膜法によるAl_<1-x>In_xN薄膜の作製
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Al_<1-x>In_xN was grown on Al_2O_3(0001) substrate by the use of high density active nitrogen species, which was generated at the resonance point of nitrogen-ECR plasma. By the use of this method. Al_<1-x>In_xN (x≦0.5) films were grown at the substrate temperature lower than 600℃. It was found from XRD, FT-IR, Raman, PL, SEM, optical measurements that obtained Al_<1-x>In_xN films had a phase separation in the small x region. Al_<1-x>In_xN films had a trap level at 1.66eV which originated from the electronic structure of InN. A zinc-blende phase of InN was observed when Al_<1-x>In_xN was annealed at 800℃, which revealed that the phase separated Al_<1-x>In_xN was composed of Al_<1-x>In_xN and InN.
- 東海大学の論文
- 2002-09-30