<論文>AlN中間層を用いたSi(111)基板上GaNのエピタキシャル成長

スポンサーリンク

概要

• 論文の詳細を見る

• We have investigated the growth of GaN on silicon (111) using AIN intermediate layers. The AIN layers are grown at 1150℃and 1050℃. Epitaxial relationship between AIN and Si is AIN (0001)[1010]//Si (111)[220]. When the AIN layer is thicker than 1μm, some cracks occur along AIN [1010]//Si [220]. When the thickness of AIN is less than 0.5μm, there is no cracks in the AIN film. Crack-free GaN is obtained using this AIN intermediate layer. However when GaN is grown onto the crack-free AIN/Si, a clear spot is observed at 0.01Q_x^* (//Si [220]) apart from Si (111) in the reciprocal space map. This reflection is also observed as a spot at 0.408Q_y^* (Q_y^*//Si [220] and Si (220) at 0.401Q_y^*). This spot indicates that there is a structure along Si [220] with the periodicity 1.7% shorter than the lattice constant of a_<S1>[110]. This result indicates that a compressive strain exists in the Si substrate.

• 東海大学の論文
• 2002-09-30

著者

• ダビドフ V.

  ヨッフェ研究所

• 横山 篤史

  東海大学工学研究科

• 犬島 喬

  東海大学電子情報学部エレクトロニクス学科

関連論文

• ECR共鳴点成膜法によるAl_In_xN薄膜の作製
• AlN中間層を用いたSi(111)基板上GaNのエピタキシャル成長

スポンサーリンク