Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices
スポンサーリンク
概要
- 論文の詳細を見る
- 2013-06-25
著者
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Nepal Neeraj
Electronics Science And Technology Division U.s. Naval Research Laboratory
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Mastro Michael
Electronics Science And Technology Division U.s. Naval Research Laboratory
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Anderson Travis
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Hernandez Sandra
Plasma Physics Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Kub Francis
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Qadri Syed
Material Sciences and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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MYERS-WARD Rachael
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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EDDY Jr
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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NYAKITI Luke
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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FREITAS Jaime
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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WALTON Scott
Plasma Physics Division, U.S. Naval Research Laboratory
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WHEELER Virginia
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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GASKILL Kurt
Electronics Science and Technology Division, U.S. Naval Research Laboratory
関連論文
- Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-k Dielectrics
- Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices
- Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices