Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices
スポンサーリンク
概要
- 論文の詳細を見る
Epitaxial GaN films were grown by metal organic chemical vapor deposition (MOCVD) on functionalized epitaxial graphene (EG) using a thin ({\sim}11 nm) conformal AlN nucleation layer. Raman measurements show a graphene 2D peak at 2719 cm<sup>-1</sup>after GaN growth. X-ray diffraction analysis reveals [0001]-oriented hexagonal GaN with (0002) peak rocking curve full width at the half maximum (FWHM) of 544 arcsec. The FWHM values are similar to reported values for GaN grown by MOCVD on sapphire. The GaN layer has a strong room-temperature photoluminescence band edge emission. Successful demonstration of GaN growth on EG opens up the possibility of III--nitride/graphene heterostructure-based electronic devices and promises improved performance.
- 2013-06-25
著者
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Nepal Neeraj
Electronics Science And Technology Division U.s. Naval Research Laboratory
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Mastro Michael
Electronics Science And Technology Division U.s. Naval Research Laboratory
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Eddy Jr.
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Wheeler Virginia
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Walton Scott
Plasma Physics Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Anderson Travis
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Nyakiti Luke
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Myers-Ward Rachael
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Hernandez Sandra
Plasma Physics Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Kub Francis
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Qadri Syed
Material Sciences and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Freitas Jaime
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Gaskill Kurt
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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Nepal Neeraj
Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
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MYERS-WARD Rachael
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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NYAKITI Luke
Electronics Science and Technology Division, U.S. Naval Research Laboratory
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FREITAS Jaime
Electronics Science and Technology Division, U.S. Naval Research Laboratory
関連論文
- Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-k Dielectrics
- Epitaxial Growth of III--Nitride/Graphene Heterostructures for Electronic Devices
- Epitaxial Growth of III-Nitride/Graphene Heterostructures for Electronic Devices