Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer
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概要
- 論文の詳細を見る
- 2013-06-25
著者
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Wei Qiyuan
Department Of Physics Arizona State University
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Li Ding
State Key Laboratory For Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
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ZHANG Guoyi
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
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Li Lei
State Key Laboratory For Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
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Hu Xiaodong
State Key Laboratory For Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
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Yang Zhijian
State Key Laboratory For Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
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Chen Weihua
State Key Laboratory For Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
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WU Jiejun
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
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- Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al
- Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer