Effect of Diffused B During Annealing on the Electronic Structure of the MgO Barrier in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2012-03-25

著者

• Shin Hyun-joon

  Pohang Accelerator Laboratory And Department Of Physics Pohang University Of Science And Technology

• Choi Hyoung

  Physics And Ipap Yonsei University

• Han Jinhee

  Physics And Ipap Yonsei University

• Han Yoonsung

  Materials Science And Engineering Yonsei University

• HONG Jongill

  Materials Science and Engineering, Yonsei University

• Shin Hyun-joon

  Pohang Accelerator Laboratory

• Hong Jongill

  Materials Science And Engineering Yonsei University

関連論文

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• Synchrotron-Based X-ray Spectroscopic Investigation of Nitrogen-Doped Ge–Bi (8.4 at. %)–Te Thin Films during the Amorphous-to-Crystalline Structural Phase Transition
• Effect of Diffused B During Annealing on the Electronic Structure of the MgO Barrier in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions
• A Study on the Sensitivity of a Spin Valve with Conetic-Based Free Layers
• Characterization of Surface Chemical States of a Thick Insulator: Chemical State Imaging on MgO Surface
• Injection Molding of Nanopillars for Perpendicular Patterned Magnetic Media with Metallic Nanostamp

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