Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2012-02-25
著者
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KENNARD Mark
SOITEC
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Frayssinet Eric
Crhea-cnrs
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SCHENK H.
SOITEC SPECIALTY ELECTRONICS
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BAVARD Alexis
CRHEA-CNRS
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SONG Xi
LMP (EA 3246)
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CAYREL Frederic
LMP (EA 3246)
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GHOULI Hassan
SOITEC SPECIALTY ELECTRONICS
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LIJADI Melania
SOITEC SPECIALTY ELECTRONICS
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NAIM Laurent
SOITEC SPECIALTY ELECTRONICS
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CORDIER Yvon
CRHEA-CNRS
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RONDI Daniel
OMMIC
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ALQUIER Daniel
LMP (EA 3246)
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Naÿm Laurent
SOITEC SPECIALTY ELECTRONICS, Place Marcel Rebuffat, Z. A. de Courtaboeuf 7, 91140 Villejust, France
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CORDIER Yvon
CRHEA, Centre de Recherche sur l'Hetero-Epitaxie et ses Applications, CNRS UPR 10
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Schenk H.P.
SOITEC SPECIALTY ELECTRONICS, Place Marcel Rebuffat, Z. A. de Courtaboeuf 7, 91140 Villejust, France
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- Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates
- Bias Dependence of Gallium Nitride Micro-Electro-Mechanical Systems Actuation Using a Two-Dimensional Electron Gas