High Carrier Mobility of 3.8 cm2 V-1 s-1 in Polydiacetylene Thin Films Polymerized by Electron Beam Irradiation

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概要

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• The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8 cm2 V-1 s-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of $\mu_{\text{max}} = 3.8$ cm2 V-1 s-1.

• Japan Society of Applied Physicsの論文
• 2011-09-25

著者

• Adachi Chihaya

  Center For Future Chemistry Kyushu University

• TSUTSUI Kyoji

  R&D Center, Ricoh Co. Ltd.

• Ueda Yasukiyo

  Department Of Applied Chemistry Faculty Of Engineering Kobe University

• Kato Takuji

  Center For Organic Photonics And Electronics Research Kyushu University

• Yasumatsu Mao

  Center For Organic Photonics And Electronics Research (opera) Kyushu University

• Origuchi Chikako

  R&D Center, RICOH Co., Ltd., Yokohama 224-0035, Japan

• Origuchi Chikako

  R&d Center Ricoh Co. Ltd.

• KATO Takuji

  Center for Organic Photonics and Electronics Research (OPERA), Kyushu University

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