ESD Robustness Improvement for Integrated DMOS Transistors-The Different Gate-Voltage Dependence of I_<t2> Between VDMOS and LDMOS Transistors
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概要
- 論文の詳細を見る
- 2011-07-01
著者
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Maegawa Shigeto
Mixed Signal Device Technology Department Production And Technology Unit Renesas Technology Corporat
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Kuroi Takashi
Mixed Signal Device Technology Department Production And Technology Unit Renesas Technology Corporat
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FUJIWARA Yasufumi
Course of Materials Science and Engineering, Division of Materials and Manufacturing Science, Gradua
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HATASAKO Kenichi
Mixed Signal Device Technology Department, Production and Technology Unit, Renesas Technology Corpor
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YAMAMOTO Fumitoshi
Mixed Signal Device Technology Department, Production and Technology Unit, Renesas Technology Corpor
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Uenishi Akio
Mixed Signal Device Technology Department Production And Technology Unit Renesas Technology Corporat
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Maegawa Shigeto
Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro
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Hatasako Kenichi
Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro
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Yamamoto Fumitoshi
Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro
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Fujiwara Yasufumi
Course Of Materials Science And Engineering Graduate School Of Engineering Osaka University
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Kuroi Takashi
Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro
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Uenishi Akio
Mixed Signal Device Technology Department Devices & Analysis Technology Division Renesas Electro
関連論文
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- Edge-Light Backlight Unit Using Optically Patterned Film
- ESD Robustness Improvement for Integrated DMOS Transistors-The Different Gate-Voltage Dependence of I_ Between VDMOS and LDMOS Transistors
- Novel Design of Vertical Double-Diffused Metal–Oxide–Semiconductor Transistor for High Electrostatic Discharge Robustness