Highly Sensitive Hydrogen Detection Using a Pt-Catalyzed InN Epilayer

スポンサーリンク

概要

• 論文の詳細を見る

• The current response to hydrogen for a biased ultrathin (${\sim}10$ nm) In-polar indium nitride (InN) epilayer with a catalytic Pt film on top has been investigated. The Pt--InN sensor shows a high current variation ratio of ${\sim}400$% with response/recovery times of less than 1 min while exposed to 2000 ppm H2/air at 150 °C. Even at room temperature, a current variation ratio of 81% was observed under the same gas environment. At 125 °C, the detection limit was experimentally found to be less than 5 ppm. In comparison with a bare InN sensor, the Pt catalyst enhances the current variation by 375 times at 2000 ppm H2/air.

• Japan Society of Applied Physicsの論文
• 2010-11-25

著者

• Gwo Shangjr

  Institute Of Nanoengineering And Microsystems National Tsing Hua University

• Chang Kai-kuen

  Department Of Physics National Tsing Hua University

• Chang Yuh-hwa

  Institute Of Nanoengineering And Microsystems National Tsing Hua University

• Yeh J.

  Institute of Nanoengineering and Microsystems, National Tsing Hua University, Hsinchu, Taiwan 30013,

• Yeh J.

  Institute Of Nanoengineering And Microsystems National Tsing Hua University

関連論文

• GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures
• Highly Sensitive Hydrogen Detection Using a Pt-Catalyzed InN Epilayer
• Environmentally Assisted Cracking Behavior of Dissimilar Metal Weldments under High Temperature Water Conditions

スポンサーリンク