GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

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概要

• 論文の詳細を見る

• High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

• 2011-09-25

著者

• Yeh J.

  Institute Of Nanoengineering And Microsystems National Tsing Hua University

• Lin Yu-Sheng

  Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.

• Yeh J.

  Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu 30013, Taiwan, R.O.C.

関連論文

• GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures
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