A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory

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概要

• 論文の詳細を見る

• A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.

• （社）電子情報通信学会の論文
• 2010-02-01

著者

• Park Ki-tae

  Samsung Electronics Co. Ltd.

• SONG Yunheub

  Hanyang University

• KANG Myounggon

  Samsung Electronics Co. Ltd.

• SONG Youngsun

  Samsung Electronics Co. Ltd.

• LEE Sungsoo

  Samsung Electronics Co. Ltd.

• LIM Young-Ho

  Samsung Electronics Co. Ltd.

関連論文

• Boosted Bit Line Program Scheme for Low Operating Voltage MLC NAND Flash Memory
• A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory
• Improving read disturb characteristics by self-boosting read scheme for multilevel NAND flash memories (Special issue: Solid state devices and materials)
• Improving read disturb characteristics by using double common source line and dummy switch architecture in multi level cell NAND flash memory with low power consumption (Special issue: Solid state devices and materials)

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