A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs
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概要
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A flexible noise de-embedding method for on-wafer microwave measurements of silicon MOSFETs is presented in this study. We use the open, short, and thru dummy structures to subtract the parasitic effects from the probe pads and interconnects of a fixtured MOS transistor. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate, drain, and source terminals of the MOSFET. The parasitics of the dangling leg in the source terminal are also modeled and taken into account in the noise de-embedding procedure. The MOS transistors and de-embedding dummy structures were fabricated in a standard CMOS process and characterized up to 20GHz. Compared with the conventional de-embedding methods, the proposed technique is accurate and area-efficient.
- (社)電子情報通信学会の論文
- 2009-09-01
著者
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Wang Yueh-hua
Department Of Communication Engineering National Chiao-tung University
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Wu Lin‐kun
Department Of Communication Engineering National Chiao-tung University
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CHO Ming-Hsiang
Department of Communication Engineering, National Chiao-Tung University
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WU Lin-Kun
Department of Communication Engineering, National Chiao-Tung University
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Wu Lin-kun
Department Of Communication Engineering National Chiao-tung University
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Cho Ming-hsiang
Department Of Communication Engineering National Chiao-tung University
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Cho Ming
National Nano Device Laboratories
関連論文
- A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs
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- A Cascade Open-Short-Thru (COST) De-Embedding Method for Microwave On-Wafer Characterization and Automatic Measurement(Microelectronic Test Structures)
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