Preparation of TiO_2 Thin Film Photocatalyst by High-rate Low-temperature Sputtering Method

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概要

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•   After depositing an ultra-thin metallic Ti film by sputtering, we repeated the process of exposing the still active plasma gas for high-rate low-temperature deposition of a metal compound film, thereby successfully fabricating a thin film of TiO2 with photocatalytic properties. The TiO2 thin film produced using the present method exhibited approximately 15 times the deposition rate of DC reactive magnetron sputtering, yielding a crystalline structure using an unheated substrate (approximately 40°C).

• 2010-01-20

著者

• NOGUCHI Daisuke

  都城工業高等専門学校物質工学科

• OKUTSU Kana

  都城工業高等専門学校物質工学科

• ONITSUKA Saori

  都城工業高等専門学校物質工学科

• KAWANO Yoshihiko

  株式会社ホンダロック

• SEI Fumihiro

  株式会社ホンダロック

関連論文

• Preparation of TiO_2 Thin Film Photocatalyst by High-rate Low-temperature Sputtering Method
• Formation of WO3 reduction coloring thin film using a combination sputtering method featuring radio-frequency oxygen plasma irradiation
• Formation of WO_3 Reduction Coloring Thin Film Using a Combination Sputtering Method Featuring Radio-Frequency Oxygen Plasma Irradiation

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