アモルファスセレンを用いた直接変換型FPD装置における残像現象の測定

概要

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The purpose of this study was to evaluate the residual effect generated by the amorphous selenium flat panel detector system (a-Se FPD). A residual effect occurs as a result of the addition of delayed electrons by previous X-ray irradiation joining the signal and change in detector sensitivity caused by hole-electron recombination or trapped electrons in a-Se. To evaluate the effect of previous radiation exposure, we irradiated a-Se FPD that were half-shielded by a 3 mm thick lead plate. A residual effect was generated in irradiated areas, with the unirradiated areas serving as reference points. Next, we removed the lead plate and took a new image using uniform irradiation. The difference in pixel value between irradiated and nonirradiated areas was measured using a variety of time intervals between each exposure. Through a comparison of pixel values from images taken over various time intervals, we discovered our system needs 20 hours to return to a normal state and become capable of producing a residual-free image.
2009-06-20