m-Plane GaN Films Grown on Patterned a-Plane Sapphire Substrates with 3-inch Diameter
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-03-25
著者
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Shibata Naoki
Optoelectronics Toyoda Gosei Co. Ltd.
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Ushida Yasuhisa
Optoelectronics Toyoda Gosei Co. Ltd.
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Nakada Naoyuki
Optoelectronics Toyoda Gosei Co. Ltd.
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Nitta Shugo
Optoelectronics Toyoda Gosei Co. Ltd.
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Saito Yoshiki
Optoelectronics Toyoda Gosei Co. Ltd.
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OKUNO Koji
Optoelectronics, Toyoda Gosei Co., Ltd.
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BOYAMA Shinya
Optoelectronics, Toyoda Gosei Co., Ltd.
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TOHMON Ryoichi
Optoelectronics, Toyoda Gosei Co., Ltd.
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Okuno Koji
Optoelectronics Toyoda Gosei Co. Ltd.
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Boyama Shinya
Optoelectronics Toyoda Gosei Co. Ltd.
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Tohmon Ryoichi
Optoelectronics Toyoda Gosei Co. Ltd.
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Shibata Naoki
Optoelectronics Technical Div. Toyoda Gosei Co. Ltd.
関連論文
- m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates
- m-Plane GaN Films Grown on Patterned a-Plane Sapphire Substrates with 3-inch Diameter
- Short Wavelength LED Based on III-V Nitride and its Applications(LED Lighting Technologies)