m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 2009-04-25
著者
-
Shibata Naoki
Optoelectronics Toyoda Gosei Co. Ltd.
-
Ushida Yasuhisa
Optoelectronics Toyoda Gosei Co. Ltd.
-
Nakada Naoyuki
Optoelectronics Toyoda Gosei Co. Ltd.
-
Nitta Shugo
Optoelectronics Toyoda Gosei Co. Ltd.
-
Saito Yoshiki
Optoelectronics Toyoda Gosei Co. Ltd.
-
OKUNO Koji
Optoelectronics, Toyoda Gosei Co., Ltd.
-
BOYAMA Shinya
Optoelectronics, Toyoda Gosei Co., Ltd.
-
Okuno Koji
Optoelectronics Toyoda Gosei Co. Ltd.
-
Boyama Shinya
Optoelectronics Toyoda Gosei Co. Ltd.
-
Shibata Naoki
Optoelectronics Technical Div. Toyoda Gosei Co. Ltd.
関連論文
- m-Plane GaInN Light Emitting Diodes Grown on Patterned a-Plane Sapphire Substrates
- m-Plane GaN Films Grown on Patterned a-Plane Sapphire Substrates with 3-inch Diameter
- Short Wavelength LED Based on III-V Nitride and its Applications(LED Lighting Technologies)