Ge/Si Heterojunction Photodiodes Fabricated by Low Temperature Wafer Bonding

スポンサーリンク

概要

• 論文の詳細を見る

• Ge/Si heterojunctions are formed by wet wafer bonding at annealing temperatures of 250 or 350 °C. Photodiodes fabricated using Ge/Si heterojunctions exhibit photocurrents flowing over the heterojunction with an internal quantum efficiency higher than 80% at wavelengths between 1000 and 1550 nm. The measured photocurrent--voltage and capacitance--voltage characteristics reveal that the electrical property of the heterojunctions is the same as that for samples fabricated by higher temperature annealing.

• Japan Society of Applied Physicsの論文
• 2008-07-25

著者

• Kanbe Hiroshi

  Kochi University Of Technology

• Miyaji Masayuki

  Kochi University of Technology, Tosayamada-cho, Kami, Kochi 782-8502, Japan

• Ito Tatsuya

  Kochi University of Technology, Tosayamada-cho, Kami, Kochi 782-8502, Japan

• Ito Tatsuya

  Kochi University Of Technology

• Miyaji Masayuki

  Kochi University Of Technology

関連論文

• Ge/Si Heterojunction Photodiodes Fabricated by Low Temperature Wafer Bonding
• Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy

スポンサーリンク