Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy

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概要

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• An InAs/Si heterojunction formed by a wet wafer bonding method with an annealing temperature of 350 °C was investigated by transmission electron microscopy (TEM). InAs and Si were observed to be uniformly bonded without any voids in a 2-μm-long field of view in a bright-field TEM image. A high-resolution TEM image revealed that, between the InAs and Si lattice images, there existed a transition layer having an amorphous-like structure 10--12 nm thick, which had the role of atomically combining the two crystals. The transition layer was separated into two layers of different brightnesses in a high-angle annular dark-field scanning TEM image. The distributions of In, As, Si, and O atoms in the vicinity of the heterointerface were examined by energy dispersive X-ray spectroscopy. The amounts of In, As, and Si atoms gradually changed within a 20-nm-thick intermediate layer including the transition layer. Accumulated O atoms were detected in the transition layer.

• 2013-01-25

著者

• Kanbe Hiroshi

  Kochi University Of Technology

• Taniwaki Masafumi

  Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Kanbe Hiroshi

  Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Tada Masanori

  Kochi University of Technology, Kami, Kochi 782-8502, Japan

• Kochigahama Takuya

  Kochi University of Technology, Kami, Kochi 782-8502, Japan

関連論文

• Ge/Si Heterojunction Photodiodes Fabricated by Low Temperature Wafer Bonding
• Investigation of Wafer-Bonded InAs/Si Heterojunction by Transmission Electron Microscopy

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