Parasitic effects and reliability issues on GaN based HEMTs
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
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Zanoni Enrico
Department Of Information Engineering (del) University Of Padova
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Zanoni Enrico
Department Of Information Engineering University Of Padova
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Dua Christian
Alcatel-thales Iii-v Lab
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Peroni Marco
Selex Si Gaas Foundry Unit Engineering Department Via Tiburtina
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MENEGHESSO Gaudenzio
Department of Information Engineering (DEl), University of Padova
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UREN Michael
QinetiQ Ltd
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Meneghesso Gaudenzio
Department Of Information Engineering (del) University Of Padova
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Meneghesso Gaudenzio
Department Of Information Engineering University Of Padova
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Dua Christian
Alcatel-Thales III--V Lab, Route de Nozay, 91460 Marcoussis, France
関連論文
- Reliability Analysis of GaN-Based LEDs for Solid State Illumination(Heterostructure Microelectronics with TWHM2003)
- Parasitic effects and reliability issues on GaN based HEMTs
- Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors