Reliability Analysis of GaN-Based LEDs for Solid State Illumination(<Special Issue>Heterostructure Microelectronics with TWHM2003)

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概要

• 論文の詳細を見る

• This work presents the results of an extensive DC current aging and failure analysis carried out on flue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• Cavallini Anna

  Dipartimento Di Fisica University Of Bologna

• Zanoni Enrico

  Department Of Information Engineering (del) University Of Padova

• MENEGHESSO Gaudenzio

  Department of Information Engineering (DEl), University of Padova

• LEVADA Simone

  Department of Information Engineering (DEl), University of Padova

• PIEROBON Roberto

  Department of Information Engineering (DEl), University of Padova

• RAMPAZZO Fabiana

  Department of Information Engineering (DEl), University of Padova

• MANFREDI Manfredo

  Dipartimento di Fisica, University of Parma, and INEM Parma

• DU Shawn

  GELcore LIC

• ELIASHEVICH Ivan

  GELcore LIC

• Pierobon Roberto

  Department Of Information Engineering (del) University Of Padova

• Rampazzo Fabiana

  Department Of Information Engineering (del) University Of Padova

• Levada Simone

  Department Of Information Engineering (del) University Of Padova

• Manfredi Manfredo

  Dipartimento Di Fisica University Of Parma And Inem Parma

• Meneghesso Gaudenzio

  Department Of Information Engineering (del) University Of Padova

関連論文

• Reliability Analysis of GaN-Based LEDs for Solid State Illumination(Heterostructure Microelectronics with TWHM2003)
• Parasitic effects and reliability issues on GaN based HEMTs

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