PMOSFET Vth Modulation Technique using Fluorine Treatment through ALD-TiN Suitable for CMOS Devices
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Kadomura S.
Technology Development Division Semiconductor Business Group Sony Corporation
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TAI K.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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YAMAGUCHI S.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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TANAKA K.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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HIRANO T.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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OSHIYAMA I.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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KAZI S.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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ANDO T.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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NAKATA M.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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YAMANAKA M.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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YAMAMOTO R.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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KANDA S.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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TATESHITA Y.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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WAKABAYASHI H.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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TAGAWA Y.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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TSUKAMOTO M.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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IWAMOTO H.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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SAITO M.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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NAGASHIMA N.
Technology Development Division, Semiconductor Business Group, Sony Corporation
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Tateshita Y.
Technology Development Division Semiconductor Business Group Sony Corporation
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Oshiyama I.
Technology Development Division Semiconductor Business Group Sony Corporation
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Tai K.
Technology Development Division Semiconductor Business Group Sony Corporation
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Kazi S.
Technology Development Division Semiconductor Business Group Sony Corporation
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Iwamoto H.
Technology Development Division Semiconductor Business Group Sony Corporation
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Kanda S.
Technical Center Denso International America Inc.
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Nagashima N.
Technology Development Division Semiconductor Business Group Sony Corporation
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Tsukamoto M.
Technology Development Division Semiconductor Business Group Sony Corporation
関連論文
- PMOSFET Vth Modulation Technique using Fluorine Treatment through ALD-TiN Suitable for CMOS Devices
- Application of HfSiON to Deep Trench Capacitors of Sub-45nm Node Embedded DRAM
- Tinv Scaling and Jg Reducing for nMOSFET with HfSi_x/HfO_2 Gate Stack by Interfacial Layer Formation Using Ozone Water Treatment Process
- Gate Overlapped Raised Extension Structure (GORES) MOSFET by Using In-situ Doped Selective Si Epitaxy
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