Self-aligned MTJ etching technique using side walls for high-density 8F^2 MRAMs
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
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Yoda H.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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UEDA T.
Corporate Research & Development Center, Toshiba Corporation
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AIKAWA H.
Corporate Research & Development Center, Toshiba Corporation
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AMANO M.
Corporate Research & Development Center, Toshiba Corporation
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YOSHIKAWA M.
Corporate Research & Development Center, Toshiba Corporation
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KISHI T.
Corporate Research & Development Center, Toshiba Corporation
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SHIMOMURA N.
Corporate Research & Development Center, Toshiba Corporation
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HADA H.
System Devices Research Laboratories, NEC Corporation
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TAHARA S.
System Devices Research Laboratories, NEC Corporation
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KITAGAWA E.
Corporate Research & Development Center, Toshiba Corporation
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TAKAHASHI S.
Corporate Research & Development Center, Toshiba Corporation
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KAI T.
Corporate Research & Development Center, Toshiba Corporation
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KAJIYAMA T.
SoC Research & Development Center, Toshiba Corporation
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HOSOTANI K.
SoC Research & Development Center, Toshiba Corporation
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ASAO Y.
Corporate Research & Development Center, Toshiba Corporation
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SUEMITSU K.
System Devices Research Laboratories, NEC Corporation
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YODA H.
Corporate Research & Development Center, Toshiba Corporation
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Sakimura N.
Corporate Research & Development Center Toshiba Corporation
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Hada H.
System Devices Research Laboratories Nec Corporation
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Hosotani K.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Suemitsu K.
System Devices Research Laboratories Nec Corporation
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Kishi T.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Amano M.
Corporate Research & Development Center Toshiba Corporation
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Aikawa H.
Corporate Research & Development Center Toshiba Corporation
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Tahara S.
System Devices Research Laboratories Nec Corporation
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Kajiyama T.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Asao Y.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
関連論文
- Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Yoke Wiring Technology
- Self-aligned MTJ etching technique using side walls for high-density 8F^2 MRAMs
- Recent Advancements in MRAM technologies
- Thermally Stable Magnetic Tunnel Junctions for High Density MRAM
- Potential of MRAM and Technological Challenges