Recent Advancements in MRAM technologies
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-21
著者
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Ikegawa S.
Corporate Research & Development Center Toshiba Corporation
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Yoda H.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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HADA H.
System Devices Research Laboratories, NEC Corporation
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TAHARA S.
System Devices Research Laboratories, NEC Corporation
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ASAO Y.
Corporate Research & Development Center, Toshiba Corporation
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YODA H.
Corporate Research & Development Center, Toshiba Corporation
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TSUCHIDA K.
Corporate Research & Development Center, Toshiba Corporation
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ISHIWATA N.
System Devices Research Laboratories, NEC Corporation
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SUGIBAYASHI T.
System Devices Research Laboratories, NEC Corporation
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Sugibayashi T.
System Devices Research Laboratories Nec Corporation
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Hada H.
System Devices Research Laboratories Nec Corporation
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Tahara S.
System Devices Research Laboratories Nec Corporation
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Asao Y.
Center For Semiconductor Research & Development Semiconductor Company Toshiba Corporation
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Ishiwata N.
System Devices Research Laboratories Nec Corporation
関連論文
- Process Integration of Low-Power and High-Speed 16Mb MRAM using Multi-Layer Yoke Wiring Technology
- Self-aligned MTJ etching technique using side walls for high-density 8F^2 MRAMs
- Recent Advancements in MRAM technologies
- Thermally Stable Magnetic Tunnel Junctions for High Density MRAM
- Potential of MRAM and Technological Challenges