Fabrication and Characterization of Ferroelectric Gate Field Effect Transistor Memory Based on Ferroelectric-Insulator Interface Conduction
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Lee Bong-yeon
Division Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate Schoo
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Noda Minoru
Division Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate Schoo
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OKUYAMA Masanori
Division of Advanced Electronics and Optical Science, Department of System Innovation, Graduate Scho
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IKEMORI Shin-ichi
Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate Sch
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Ikemori Shin-ichi
Division Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate Schoo
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Okuyama Masanori
Division Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate Schoo
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Okuyama Masanori
Division of Advanced Electrics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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